TRANSISTORS

Table displaying typical Germanium Transisitor Specs. 1 page.

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. 7 pages.

The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 8 pages.

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 7 pages.

For switching and amplifier applications. 4 pages.

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. 7 pages.

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. 7 pages.

Selector Guide to Silicon signal transistors. 4 pages.

Silicon signal transistors general purpose amplifiers TO-98 package. 10 pages.

TO-92 plastic package transistors (PNP). 1 page.

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 7 pages.

5 pages.

The following is a very small sample of the types currently available, but should be of some assistance when you have no idea what a particular device is supposed to do. For devices not listed here, you will need to do your own checking (either on the web, or elsewhere). For basic case information, please see the case outlines at the end of this page. These are not complete (the old germanium devices are not represented), but the common ones are there. Note that some devices have different pinouts, depending on the sub-class of the case type. These are not accounted for in this list. 12 pages.

NPN general purpose transistors. 9 pages.

The Central Semiconductor BC107, BC108, BC109 series types are silicon NPN small signal transisitors manufactured by the epitaxial planar process designed for general purpose amlifier applications. 2 pages.

HannStar Display model HSD070PWW1-B00 is a color active matrix thin film transistor (TFT) liquid crystal display (LCD) that uses amorphous silicon TFT as a switching device. This model is composed of a TFT LCD panel, a driving circuit and a back light system. This TFT LCD has a 7(16:10) inch diagonally measured active display area with WXGA (1280 horizontal by 800 vertical pixel) resolution. 30 pages.

NEC NPN silicon power transistor. 2 pages.

MOSPEC NPN silicon power transistors designed for use in low-frequency power amplifier applications. 3 pages.

This handy transistor comparison table is provided by Futurlec. 4 pages.

Information in this PDF came from EngPlanet.com and is a useful reference document. 3 pages.

The ULN2801A-ULN2805Aeach contain eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA continuous) and can withstand at least50V in the off state. Outputs may be paralleled for higher current capability. 8 pages.

The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application. 5 pages.